{"Polarity":"Uni-Directional","Clamping Voltage":"53.4(V)","Test Current (It)":"1(mA)","Reverse Breakdown Voltage":"26.7(V)","Mounting":"Through Hole","Rad Hardened":"No","Leakage Current (Max)":"0.001(uA)","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Package Type":"DO-35","Peak Pulse Power Dissipation":"1400(W)","Peak Pulse Current":"7.49(A)","Reverse Stand-off Voltage ":"24(V)","Pin Count":"2","Number of Elements":"1"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"24","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"53.4","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"50","Package":"DO-213AA","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Min.(V)Breakdown Voltage":"26.7","I(RM) Max.(A) Reverse Current":"1.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"7.49"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"24","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"50.6","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"50","Package":"DO-213AA","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Min.(V)Breakdown Voltage":"26.7","I(RM) Max.(A) Reverse Current":"1.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"7.91"}...