Fujielectric.co.jp/1MBH25D-120
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-3PL, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"300 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"MOTOR CONTROL","Collector Current-Max (IC)":"38 A","Turn-on Time-Nom (ton)":"160 ns","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECT...
1327 Bytes - 03:00:59, 20 May 2024
Fuji_semiconductor/1MBH25D-120
{"Dimensions":"20.5 x 5 x 26 mm","Mounting Type":"Through Hole","Maximum Power Dissipation":"310 W","Maximum Collector Emitter Voltage":"1200 V","Channel Type":"N","Width":"5 mm","Length":"20.5 mm","Maximum Gate Emitter Voltage":"\u00b120 V","Package Type":"TO-3PL","Configuration":"Single","Pin Count":"3"}...
1306 Bytes - 03:00:59, 20 May 2024
Fujitsu.com/1MBH25D-120
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-3PL, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Collector Current-Max (IC)":"38 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configuration":"SINGLE WITH BUILT-IN DIODE","Number of Termi...
1222 Bytes - 03:00:59, 20 May 2024