Ibm.com/IBM11N32735BB60J
{"tW Min (S)":"104n","t(acc) Max. (S)":"60n","Package":"DIMM","Number of Words":"32M","P(D) Max.(W) Power Dissipation":"15.6","Nom. Supp (V)":"3.3","Pins":"168","Military":"N","Bits Per Word":"72","Technology":"CMOS","Output Config":"3-State"}...
788 Bytes - 02:04:37, 19 May 2024
Ibm.com/IBM11N32735BB60W
{"tW Min (S)":"104n","t(acc) Max. (S)":"60n","Package":"DIMM","Number of Words":"32M","P(D) Max.(W) Power Dissipation":"15.6","Nom. Supp (V)":"3.3","Pins":"168","Military":"N","Bits Per Word":"72","Technology":"CMOS","Output Config":"3-State"}...
789 Bytes - 02:04:37, 19 May 2024
Ibm.com/IBM11N32735CB60J
{"tW Min (S)":"104n","t(acc) Max. (S)":"60n","Package":"DIMM","Number of Words":"32M","P(D) Max.(W) Power Dissipation":"15.6","Nom. Supp (V)":"3.3","Pins":"168","Military":"N","Bits Per Word":"72","Technology":"CMOS","Output Config":"3-State"}...
789 Bytes - 02:04:37, 19 May 2024
Ibm.com/IBM11N32735CB60W
{"tW Min (S)":"104n","t(acc) Max. (S)":"60n","Package":"DIMM","Number of Words":"32M","P(D) Max.(W) Power Dissipation":"15.6","Nom. Supp (V)":"3.3","Pins":"168","Military":"N","Bits Per Word":"72","Technology":"CMOS","Output Config":"3-State"}...
789 Bytes - 02:04:37, 19 May 2024
Microsemi.com/1N3273
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"DO-9, 1 PIN","Terminal Form":"HIGH CURRENT CABLE","Package Style":"POST\/STUD MOUNT","Rep Pk Reverse Voltage-Max":"1000 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"SOFT RECOVERY POWER","Average Forward Current-Max":"275 A","Case Connection":"CATHODE","Non-rep Pk Forward Current-Max":"5000 A","Terminal Position":"UPPER","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUN...
1289 Bytes - 02:04:37, 19 May 2024
Microsemi.com/1N3273IL
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"DO-9, 1 PIN","Terminal Form":"HIGH CURRENT CABLE","Package Style":"POST\/STUD MOUNT","Rep Pk Reverse Voltage-Max":"1000 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"SOFT RECOVERY POWER","Average Forward Current-Max":"275 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"5000 A","Terminal Position":"UPPER","Diode Type":"RECTIFIER DIODE","Package Shape":"ROU...
1268 Bytes - 02:04:37, 19 May 2024
Microsemi.com/1N3273R
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"DO-9, 1 PIN","Terminal Form":"HIGH CURRENT CABLE","Package Style":"POST\/STUD MOUNT","Rep Pk Reverse Voltage-Max":"1000 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"SOFT RECOVERY POWER","Average Forward Current-Max":"275 A","Case Connection":"ANODE","Non-rep Pk Forward Current-Max":"5000 A","Terminal Position":"UPPER","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND"...
1257 Bytes - 02:04:37, 19 May 2024
Pwrx.com/1N3273
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"12mA @ 1000V","Voltage - Forward (Vf) (Max) @ If":"-","Family":"Diodes, Rectifiers - Single","Standard Package":"8","Series":"-","Capacitance @ Vr, F":"-","Supplier Device Package":"DO-205AB, DO-9","Reverse Recovery Time (trr)":"-","Datasheets":"1N3260-76(R)","Current - Average Rectified (Io)":"160A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u00b0C","Package \/ Case":"DO-205AB, DO-9, Stud","Voltage ...
1410 Bytes - 02:04:37, 19 May 2024
Pwrx.com/1N3273R
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"12mA @ 1000V","Voltage - Forward (Vf) (Max) @ If":"-","Family":"Diodes, Rectifiers - Single","Standard Package":"8","Series":"-","Capacitance @ Vr, F":"-","Supplier Device Package":"DO-205AB, DO-9","Reverse Recovery Time (trr)":"-","Datasheets":"1N3260-76(R)","Current - Average Rectified (Io)":"160A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u00b0C","Package \/ Case":"DO-205AB, DO-9, Stud","Voltage ...
1418 Bytes - 02:04:37, 19 May 2024