{"Category":"Discrete Semiconductor Products","Operating Temperature - Junction":"-55\u00b0C ~ 250\u00b0C","Package \/ Case":"TO-257-3","Product Photos":"1N80xx-GA","Reverse Recovery Time (trr)":"0ns","Datasheets":"1N8032-GA","Standard Package":"10","Current - Average Rectified (Io)":"2.5A","Voltage - Forward (Vf) (Max) @ If":"1.3V @ 2.5A","Voltage - DC Reverse (Vr) (Max)":"650V","Capacitance @ Vr, F":"274pF @ 1V, 1MHz","Diode Type":"Silicon Carbide Schottky","Online Catalog":"Silicon Carbide Power Schottky...