{"Category":"Discrete Semiconductor Products","Operating Temperature - Junction":"-55\u00b0C ~ 250\u00b0C","Package \/ Case":"TO-257-3","Product Photos":"1N80xx-GA","Reverse Recovery Time (trr)":"0ns","Datasheets":"1N8034-GA","Standard Package":"10","Current - Average Rectified (Io)":"9.4A (DC)","Voltage - Forward (Vf) (Max) @ If":"1.34V @ 10A","Voltage - DC Reverse (Vr) (Max)":"650V","Capacitance @ Vr, F":"1107pF @ 1V, 1MHz","Diode Type":"Silicon Carbide Schottky","Online Catalog":"Silicon Carbide Power Sc...