{"C(iss) Max. (F)":"1.1n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"7.0","I(D) Abs. Max.(A) Drain Curr.":"12","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"70n","r(DS)on Max. (Ohms)":"200m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"76","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"5.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"6.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0"...

{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Terminal Form":"WIRE","Package Style":"LONG FORM","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.5000 W","Average Forward Current-Max":"0.2000 A","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"SIGNAL DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.0030 us","Number of Elements":"1"}...

{"t(rr) Max.(s) Rev.Rec. Time":"2n","Semiconductor Material":"Silicon","Package":"DO-35","I(O) Max.(A) Output Current":"200m","I(RM) Max.(A) Reverse Current":"100n","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"75","@I(F) (A) (Test Condition)":"10m","Military":"N","@I(FM) (A) (Test Condition)":"100m","V(FM) Max.(V) Forward Voltage":"1"}...