{"Capacitance, Reverse Recovery":"3.5 pF","Voltage, Breakdown, Gate to Source":"\u201340 V","Resistance, On":"100 Ohms","Current, Gate Operating":"100 pA","Current, Gate Reverse":"\u20131000 pA","Noise, Voltage":"3 nV\/\u221aHZ","Voltage, Gate to Source, Cut-Off":"\u20133 V","Resistance, Drain to Source On":"100 Ohms","Voltage, Gate to Source, Forward":"1 V","Noise, Input Voltage":"3 nV\/\u221aHz","Voltage, Gate to Source, Breakdown":"\u201340 V","Transconductance, Forward":"6 mS","Package Type":"TO-236 (SO...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Series":"-","Voltage - Breakdown (V(BR)GSS)":"40V","Family":"JFETs (Junction Field Effect)","Current - Drain (Idss) @ Vds (Vgs=0)":"5mA @ 20V","PCN Assembly\/Origin":"SIL-062-2014-Rev-0 30\/May\/2014","Resistance - RDS(On)":"100 Ohm","Supplier Device Package":"TO-206AA (TO-18)","Voltage - Cutoff (VGS off) @ Id":"500mV @ 1nA","Power - Max":"1.8W","Current Drain (Id) - Max":"-","Datasheets":"2N\/PN\/SST4391-4393 Series","FET Type":"N-Channel","...