{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-72, 4 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"1200 MHz","Collector Current-Max (IC)":"0.0300 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Number of Terminals":"4","Number of Elements":"1"}...

{"Absolute Max. Power Diss. (W)":"200m","Noise Figure Max. (dB)":"3.0","V(BR)CBO (V)":"30","h(FE) Min. Static Current Gain":"20","I(C) Abs.(A) Collector Current":"30m","h(FE) Max. Current gain.":"150","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"10","Package":"TO-72","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"1.2G","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JAN2N4957","@I(C) (A) (Test Condition)":"2.0m","Power Gain Min. (dB)":...

{"Absolute Max. Power Diss. (W)":"200m","Noise Figure Max. (dB)":"3.0","V(BR)CBO (V)":"30","h(FE) Min. Static Current Gain":"20","I(C) Abs.(A) Collector Current":"30m","h(FE) Max. Current gain.":"150","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"10","Package":"TO-72","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"1.2G","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANTX2N4957","@I(C) (A) (Test Condition)":"2.0m","Power Gain Min. (dB)...

{"Absolute Max. Power Diss. (W)":"200m","Noise Figure Max. (dB)":"3.0","V(BR)CBO (V)":"30","h(FE) Min. Static Current Gain":"20","I(C) Abs.(A) Collector Current":"30m","h(FE) Max. Current gain.":"150","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"10","Package":"TO-72","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"1.2G","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANTXV2N4957","@I(C) (A) (Test Condition)":"2.0m","Power Gain Min. (dB...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30mA","Noise Figure (dB Typ @ f)":"3.5dB @ 450MHz","Transistor Type":"PNP","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"TO-72","Packaging":"Bulk","Datasheets":"2N4957","Power - Max":"200mW","Gain":"25dB","Package \/ Case":"TO-72-3 Metal Can","Mounting Type":"Through Hole","DC Current Gain (hFE) (Mi...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30mA","Noise Figure (dB Typ @ f)":"3.5dB @ 450MHz","Transistor Type":"PNP","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"*","Packaging":"*","Datasheets":"2N4957UB","Power - Max":"200mW","Gain":"25dB","Package \/ Case":"*","Mounting Type":"*","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 5mA, 10V","O...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30mA","Noise Figure (dB Typ @ f)":"3.5dB @ 450MHz","Transistor Type":"PNP","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"TO-72","Packaging":"Bulk","Datasheets":"2N4957","Power - Max":"200mW","Gain":"25dB","Package \/ Case":"TO-72-3 Metal Can","Mounting Type":"Through Hole","DC Current Gain (hFE) (Mi...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30mA","Noise Figure (dB Typ @ f)":"3.5dB @ 450MHz","Transistor Type":"PNP","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"*","Packaging":"*","Datasheets":"2N4957UB","Power - Max":"200mW","Gain":"25dB","Package \/ Case":"*","Mounting Type":"*","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 5mA, 10V","O...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8000 pF","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"WIRE","Number of Terminals":"3","Collector-emitter Voltage-Max":"30 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.0300 A","Terminal Position":"BOTTOM","Transistor Type":"RF SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Package Style":"CYLINDRICAL","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30mA","Noise Figure (dB Typ @ f)":"3.5dB @ 450MHz","Transistor Type":"PNP","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"TO-72","Packaging":"Bulk","Datasheets":"2N4957","Power - Max":"200mW","Gain":"25dB","Package \/ Case":"TO-72-3 Metal Can","Mounting Type":"Through Hole","DC Current Gain (hFE) (Mi...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30mA","Noise Figure (dB Typ @ f)":"3.5dB @ 450MHz","Transistor Type":"PNP","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"*","Packaging":"*","Datasheets":"2N4957UB","Power - Max":"200mW","Gain":"25dB","Package \/ Case":"*","Mounting Type":"*","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 5mA, 10V","O...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30mA","Noise Figure (dB Typ @ f)":"3.5dB @ 450MHz","Transistor Type":"PNP","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"TO-72","Packaging":"Bulk","Datasheets":"2N4957","Power - Max":"200mW","Gain":"25dB","Package \/ Case":"TO-72-3 Metal Can","Mounting Type":"Through Hole","DC Current Gain (hFE) (Mi...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30mA","Noise Figure (dB Typ @ f)":"3.5dB @ 450MHz","Transistor Type":"PNP","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"*","Packaging":"*","Datasheets":"2N4957UB","Power - Max":"200mW","Gain":"25dB","Package \/ Case":"*","Mounting Type":"*","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 5mA, 10V","O...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8000 pF","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-4","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.0300 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PN...

{"Status":"DISCONTINUED","Collector-base Capacitance-Max":"0.8000 pF","Number of Elements":"1","Mfr Package Description":"DIE","Power Dissipation Ambient-Max":"0.2000 W","Collector-emitter Voltage-Max":"30 V","Transistor Element Material":"SILICON","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.0300 A","Transistor Polarity":"PNP","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Transistor Application":"AMPLIFIER"}...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8000 pF","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-4","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.0300 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PN...

{"Collector Current (DC) ":"0.03 A","Transistor Polarity":"PNP","Collector-Emitter Voltage":"30 V","Rad Hardened":"No","Mounting":"Through Hole","Emitter-Base Voltage":"3 V","Category ":"Bipolar Small Signal","Operating Temperature Classification":"Military","Power Dissipation":"0.2 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-72","Collector-Base Voltage":"30 V","DC Current Gain":"15","Pin Count":"4","Number of Elements":"1"}...

{"Status":"ACTIVE","Transistor Type":"RF SMALL SIGNAL"}...

{"Status":"ACTIVE","Transistor Type":"RF SMALL SIGNAL"}...

{"Status":"ACTIVE","Transistor Type":"RF SMALL SIGNAL"}...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8000 pF","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-4","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.0300 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PN...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8000 pF","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-4","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.0300 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PN...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8000 pF","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.0300 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8000 pF","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-4","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.0300 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PN...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8000 pF","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.0300 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8000 pF","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"WIRE","Number of Terminals":"3","Collector-emitter Voltage-Max":"30 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.0300 A","Terminal Position":"BOTTOM","Transistor Type":"RF SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Package Style":"CYLINDRICAL","Number of Elements":"1"}...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8000 pF","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-4","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.0300 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PN...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8000 pF","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.0300 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8000 pF","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-4","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.0300 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PN...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8000 pF","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.0300 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":...

"ULG, 2N4957, Silicon, PNP, 200mW, 20V, 20V, 3V, 30mA, 200°C, 1.6GHz, 0.4, 20\/150, MOT, TO72-2"...

{"@I(C) (A) (Test Condition)":"2.0m","Absolute Max. Power Diss. (W)":"200m","I(C) Abs.(A) Collector Current":"30m","Semiconductor Material":"Silicon","h(FE) Max. Current gain.":"165","f(T) Min. (Hz) Transition Freq":"1.2G","@V(CE) (V) (Test Condition)":"10","Noise Figure Max. (dB)":"3.0","@Freq. (Hz) (Test Condition)":"450M","Package":"TO-72","h(FE) Min. Static Current Gain":"30","V(BR)CBO (V)":"30","Military":"N"}...

"ULG, 2N4957UB, Silicon, PNP, 200mW, 20V, 20V, 3V, 30mA, 200°C, 1.6GHz, 0.4, 20\/150, SEM, LCC3"...