{"Category":"Discrete Semiconductor Products","Current - Valley (Iv)":"25\u00b5A","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Programmable Unijunction Transistors (PUTs)","Current - Gate to Anode Leakage (Igao)":"10nA","Series":"-","Standard Package":"2,000","Voltage - Output":"11V","PCN Obsolescence\/ EOL":"Multiple Devices 30\/Jun\/2006","Datasheets":"2N6027, 6028","Voltage":"40V","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","Power Dissipation (Max)":"300mW","Vo...

{"Category":"Discrete Semiconductor Products","Current - Valley (Iv)":"25\u00b5A","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Programmable Unijunction Transistors (PUTs)","Current - Gate to Anode Leakage (Igao)":"10nA","Series":"-","Standard Package":"1","Voltage - Output":"11V","Current - Peak":"150nA","PCN Obsolescence\/ EOL":"Multiple Devices 08\/Nov\/2014 Multiple Devices Revision 26\/Nov\/2014","Datasheets":"2N6027, 6028","Voltage":"40V","Package \/ Case":"TO-226-3, TO-92-3 (...