• @(VDS) (V) (Test Condition): 30; @I(D) (A) (Test Condition): 500m; @V(DS) (V) (Test Condition): 25; Absolute Max. Power Diss. (W): 6.25; C(iss) Max. (F): 50p; I(D) Abs. Drain Current (A): 2.0; I(DSS) Min. (A): 10u; I(GSS) Max. (A): 100n; Mil Number: JAN2N6661; Military: Y; Package: TO-39; V(BR)DSS (V): 90; V(BR)GSS (V): 30; g(fs) Max, (S) Trans. conduct,: 195m; g(fs) Min. (S) Trans. conduct.: 170m; r(DS)on Max. (Ohms): 4.0; t(f) Max. (s) Fall time.: 5.0n; t(r) Max. (s) Rise time: 5.0n
    489 bytes (90 words) - 06:45, 6 December 2018
  • @(VDS) (V) (Test Condition): 30; @I(D) (A) (Test Condition): 500m; @V(DS) (V) (Test Condition): 25; Absolute Max. Power Diss. (W): 6.25; C(iss) Max. (F): 50p; I(D) Abs. Drain Current (A): 2.0; I(DSS) Min. (A): 10u; I(GSS) Max. (A): 100n; Mil Number: JANTX2N6661; Military: Y; Package: TO-39; V(BR)DSS (V): 90; V(BR)GSS (V): 30; g(fs) Max, (S) Trans. conduct,: 195m; g(fs) Min. (S) Trans. conduct.: 170m; r(DS)on Max. (Ohms): 4.0; t(f) Max. (s) Fall time.: 5.0n; t(r) Max. (s) Rise time: 5.0n
    491 bytes (90 words) - 06:45, 6 December 2018
  • @(VDS) (V) (Test Condition): 30; @I(D) (A) (Test Condition): 500m; @V(DS) (V) (Test Condition): 25; Absolute Max. Power Diss. (W): 6.25; C(iss) Max. (F): 50p; I(D) Abs. Drain Current (A): 2.0; I(DSS) Min. (A): 10u; I(GSS) Max. (A): 100n; Mil Number: JANTXV2N6661; Military: Y; Package: TO-39; V(BR)DSS (V): 90; V(BR)GSS (V): 30; g(fs) Max, (S) Trans. conduct,: 195m; g(fs) Min. (S) Trans. conduct.: 170m; r(DS)on Max. (Ohms): 4.0; t(f) Max. (s) Fall time.: 5.0n; t(r) Max. (s) Rise time: 5.0n
    492 bytes (90 words) - 06:45, 6 December 2018
  • Category: Discrete Semiconductor Products; Current - Continuous Drain (Id) @ 25°C: 350mA (Tj); Datasheets: 2N6661; Drain to Source Voltage (Vdss): 90V; FET Feature: Standard; FET Type: MOSFET N-Channel, Metal Oxide; Family: FETs - Single; Gate Charge (Qg) @ Vgs: -; Input Capacitance (Ciss) @ Vds: 50pF @ 24V; Mounting Type: Through Hole; Online Catalog: N-Channel Standard FETs; Other Names: 2N6661MC; PCN Assembly/Origin: 3L TO-39 Qualification Assembly Site Update 22/Aug/2014 Additional Fabrication Site 03/Sep/2014 Fab Site Addition 14/Aug/2014; Package / Case: TO-205AD, TO-39-3 Metal Can; Packaging: Bulk; Power - Max: 6.25W; Product Photos: 2N6661 VN2210N2; Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V; Series: -; Standard Package: 500; Supplier Device Package: TO-39; Vgs(th) (Max) @ Id: 2V @ 1mA
    802 bytes (116 words) - 15:25, 6 December 2018
  • Case Connection: DRAIN; Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 4 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 10 pF; Mfr Package Description: HERMETIC SEALED, METAL, TO-39, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: METAL; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.7250 W; Status: ACTIVE; Terminal Finish: NOT SPECIFIED; Terminal Form: WIRE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    746 bytes (87 words) - 23:19, 6 December 2018
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 4 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: TO-220M, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: METAL; Package Shape: SQUARE; Package Style: FLANGE MOUNT; Status: ACTIVE; Terminal Finish: NOT SPECIFIED; Terminal Form: PIN/PEG; Terminal Position: SINGLE; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    570 bytes (69 words) - 23:19, 6 December 2018
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 4 ohm; EU RoHS Compliant: Yes; FET Technology: METAL-OXIDE SEMICONDUCTOR; Lead Free: Yes; Mfr Package Description: TO-220M, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: METAL; Package Shape: SQUARE; Package Style: FLANGE MOUNT; Status: ACTIVE; Terminal Finish: TIN SILVER COPPER; Terminal Form: PIN/PEG; Terminal Position: SINGLE; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    614 bytes (77 words) - 23:19, 6 December 2018
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 5.3 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: LCC3-4; Number of Elements: 1; Number of Terminals: 4; Operating Mode: ENHANCEMENT; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR; Package Style: SMALL OUTLINE; Pulsed Drain Current-Max (IDM): 3 A; Status: ACTIVE; Surface Mount: Yes; Terminal Finish: NOT SPECIFIED; Terminal Form: NO LEAD; Terminal Position: DUAL; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    684 bytes (81 words) - 23:19, 6 December 2018
  • Channel Type: N-CHANNEL; China RoHS Compliant: Yes; Configuration: SINGLE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 5.3 ohm; EU RoHS Compliant: Yes; FET Technology: METAL-OXIDE SEMICONDUCTOR; Lead Free: Yes; Mfr Package Description: LCC3-4; Number of Elements: 1; Number of Terminals: 4; Operating Mode: ENHANCEMENT; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR; Package Style: SMALL OUTLINE; Pulsed Drain Current-Max (IDM): 3 A; Status: ACTIVE; Surface Mount: Yes; Terminal Finish: GOLD; Terminal Form: NO LEAD; Terminal Position: DUAL; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    742 bytes (91 words) - 23:19, 6 December 2018
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 5.3 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: LCC3-4; Number of Elements: 1; Number of Terminals: 4; Operating Mode: ENHANCEMENT; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR; Package Style: SMALL OUTLINE; Pulsed Drain Current-Max (IDM): 3 A; Status: ACTIVE; Surface Mount: Yes; Terminal Finish: NOT SPECIFIED; Terminal Form: NO LEAD; Terminal Position: DUAL; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    684 bytes (81 words) - 23:19, 6 December 2018
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 5.3 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: LCC3-4; Number of Elements: 1; Number of Terminals: 4; Operating Mode: ENHANCEMENT; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR; Package Style: SMALL OUTLINE; Pulsed Drain Current-Max (IDM): 3 A; Status: ACTIVE; Surface Mount: Yes; Terminal Finish: NOT SPECIFIED; Terminal Form: NO LEAD; Terminal Position: DUAL; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    684 bytes (81 words) - 23:19, 6 December 2018
  • Channel Type: N-CHANNEL; China RoHS Compliant: Yes; Configuration: SINGLE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 5.3 ohm; EU RoHS Compliant: Yes; FET Technology: METAL-OXIDE SEMICONDUCTOR; Lead Free: Yes; Mfr Package Description: LCC3-4; Number of Elements: 1; Number of Terminals: 4; Operating Mode: ENHANCEMENT; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR; Package Style: SMALL OUTLINE; Pulsed Drain Current-Max (IDM): 3 A; Status: ACTIVE; Surface Mount: Yes; Terminal Finish: GOLD; Terminal Form: NO LEAD; Terminal Position: DUAL; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    742 bytes (91 words) - 23:19, 6 December 2018
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 5.3 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: LCC3-4; Number of Elements: 1; Number of Terminals: 4; Operating Mode: ENHANCEMENT; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR; Package Style: SMALL OUTLINE; Pulsed Drain Current-Max (IDM): 3 A; Status: ACTIVE; Surface Mount: Yes; Terminal Finish: NOT SPECIFIED; Terminal Form: NO LEAD; Terminal Position: DUAL; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    684 bytes (81 words) - 23:19, 6 December 2018
  • Channel Type: N-CHANNEL; China RoHS Compliant: Yes; Configuration: SINGLE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 5.3 ohm; EU RoHS Compliant: Yes; FET Technology: METAL-OXIDE SEMICONDUCTOR; Lead Free: Yes; Mfr Package Description: LCC3-4; Number of Elements: 1; Number of Terminals: 4; Operating Mode: ENHANCEMENT; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR; Package Style: SMALL OUTLINE; Pulsed Drain Current-Max (IDM): 3 A; Status: ACTIVE; Surface Mount: Yes; Terminal Finish: GOLD; Terminal Form: NO LEAD; Terminal Position: DUAL; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    742 bytes (91 words) - 23:19, 6 December 2018
  • Channel Type: N-CHANNEL; China RoHS Compliant: Yes; Configuration: SINGLE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 5.3 ohm; EU RoHS Compliant: Yes; FET Technology: METAL-OXIDE SEMICONDUCTOR; Lead Free: Yes; Mfr Package Description: LCC3-4; Number of Elements: 1; Number of Terminals: 4; Operating Mode: ENHANCEMENT; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR; Package Style: SMALL OUTLINE; Pulsed Drain Current-Max (IDM): 3 A; Status: ACTIVE; Surface Mount: Yes; Terminal Finish: GOLD; Terminal Form: NO LEAD; Terminal Position: DUAL; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    742 bytes (91 words) - 23:19, 6 December 2018
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 5.3 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: LCC3-4; Number of Elements: 1; Number of Terminals: 4; Operating Mode: ENHANCEMENT; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR; Package Style: SMALL OUTLINE; Pulsed Drain Current-Max (IDM): 3 A; Status: ACTIVE; Surface Mount: Yes; Terminal Finish: NOT SPECIFIED; Terminal Form: NO LEAD; Terminal Position: DUAL; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    684 bytes (81 words) - 23:19, 6 December 2018
  • Channel Type: N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 4 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: CERAMIC, LCC2-6; Number of Elements: 2; Number of Terminals: 6; Operating Mode: ENHANCEMENT; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR; Package Style: SMALL OUTLINE; Power Dissipation Ambient-Max: 0.5000 W; Status: ACTIVE; Surface Mount: Yes; Terminal Finish: NOT SPECIFIED; Terminal Form: NO LEAD; Terminal Position: DUAL; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    736 bytes (86 words) - 23:19, 6 December 2018
  • Case Connection: DRAIN; Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 4 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 10 pF; Mfr Package Description: TO-39, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: METAL; Package Shape: ROUND; Package Style: CYLINDRICAL; Status: ACTIVE; Terminal Finish: NOT SPECIFIED; Terminal Form: WIRE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    661 bytes (77 words) - 23:19, 6 December 2018
  • Case Connection: DRAIN; Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 4 ohm; EU RoHS Compliant: Yes; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 10 pF; Lead Free: Yes; Mfr Package Description: TO-39, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: METAL; Package Shape: ROUND; Package Style: CYLINDRICAL; Status: ACTIVE; Terminal Finish: GOLD; Terminal Form: WIRE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    692 bytes (83 words) - 23:19, 6 December 2018
  • Case Connection: DRAIN; Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 90 V; Drain Current-Max (ID): 0.9000 A; Drain-source On Resistance-Max: 4 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 10 pF; Mfr Package Description: TO-39, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: METAL; Package Shape: ROUND; Package Style: CYLINDRICAL; Status: ACTIVE; Terminal Finish: NOT SPECIFIED; Terminal Form: WIRE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    661 bytes (77 words) - 23:19, 6 December 2018

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