{"C(iss) Max. (F)":"800p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"9.0","I(D) Abs. Max.(A) Drain Curr.":"6.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"50n","r(DS)on Max. (Ohms)":"750m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"3.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"6.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"4....

{"C(iss) Max. (F)":"800p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"9.0","I(D) Abs. Max.(A) Drain Curr.":"6.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"50n","r(DS)on Max. (Ohms)":"750m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"3.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"6.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"4....

{"C(iss) Max. (F)":"800p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"9.0","I(D) Abs. Max.(A) Drain Curr.":"6.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"50n","r(DS)on Max. (Ohms)":"750m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"3.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"6.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"4....

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V","Transisto...

{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Rise Time":"80(Max) ns","Typical Turn-Off Delay Time":"60(Max) ns","Description":"Value","Maximum Continuous Drain Current":"9 A","Package":"3TO-3","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"35(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"490@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"40(Max) ns"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Rise Time":"80(Max) ns","Typical Turn-Off Delay Time":"60(Max) ns","Description":"Value","Maximum Continuous Drain Current":"9 A","Package":"3TO-3","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"35(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"490@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"40(Max) ns"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"490 mOhm @ 9A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-204AA, TO-3","Supplier Device Package":"TO-204AA","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6756,58,60,62","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"200V","Current - Continuous Drain (Id) @ 25\u0...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"15 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"9 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","C...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"15 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"9 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","C...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"490 mOhm @ 9A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/542","Package \/ Case":"TO-204AA, TO-3","Supplier Device Package":"TO-204AA (TO-3)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6756,58,60,62","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"200V","Curre...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4000 ohm","Number of Terminals":"2","DS Brea...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"490 mOhm @ 9A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/542","Package \/ Case":"TO-204AA, TO-3","Supplier Device Package":"TO-204AA (TO-3)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6756,58,60,62","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"200V","Curre...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"490 mOhm @ 9A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/542","Package \/ Case":"TO-204AA, TO-3","Supplier Device Package":"TO-204AA (TO-3)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6756,58,60,62","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"200V","Curre...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4000 ohm","Number of Terminals":"2","DS...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance...