Irf.com/2N6764JANTXV
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"190(Max) ns","Typical Turn-Off Delay Time":"170(Max) ns","Description":"Value","Maximum Continuous Drain Current":"38 A","Package":"3TO-204AE","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"35(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"65@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"130(Max) ns"}...
1429 Bytes - 04:09:20, 03 May 2024
Microsemi.com/2N6764JANTXV
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"38(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Power Dissipation":"4(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-3","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1434 Bytes - 04:09:20, 03 May 2024