{"C(iss) Max. (F)":"200p","Absolute Max. Power Diss. (W)":"15","g(fs) Max, (S) Trans. conduct,":"3.0","r(DS)on Max. (Ohms)":"0.6","@V(DS) (V) (Test Condition)":"5.0","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.3","@(VDS) (V) (Test Condition)":"20","Package":"TO-39","I(DSS) Min. (A)":"1.0m","Military":"Y","Mil Number":"JANTX2N6782","t(r) Max. (s) Rise time":"25n","V(BR)DSS (V)":"100","t(f) Max. (s) Fall time.":"20n","g(fs) Min. (S) Trans. conduct.":"1.0","I(D) Abs. Drain Curr...

{"C(iss) Max. (F)":"200p","Absolute Max. Power Diss. (W)":"15","g(fs) Max, (S) Trans. conduct,":"3.0","r(DS)on Max. (Ohms)":"0.6","@V(DS) (V) (Test Condition)":"5.0","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.3","@(VDS) (V) (Test Condition)":"20","Package":"TO-39","I(DSS) Min. (A)":"1.0m","Military":"Y","Mil Number":"JANTXV2N6782","t(r) Max. (s) Rise time":"25n","V(BR)DSS (V)":"100","t(f) Max. (s) Fall time.":"20n","g(fs) Min. (S) Trans. conduct.":"1.0","I(D) Abs. Drain Cur...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"15(W)","Continuous Drain Current":"3.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"15(W)","Continuous Drain Current":"3.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"14 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Avalanche Energy Rating (Eas)":"68 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"3.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"25(Max) ns","Description":"Value","Maximum Continuous Drain Current":"3.5 A","Package":"3TO-39","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"15(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"690@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"20(Max) ns"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"25(Max) ns","Description":"Value","Maximum Continuous Drain Current":"3.5 A","Package":"3TO-39","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"15(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"690@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"20(Max) ns"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"68 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.6000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"14 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"3.5 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Conf...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"25(Max) ns","Description":"Value","Maximum Continuous Drain Current":"3.5 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"15(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"690@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"20(Max) ns"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"25(Max) ns","Description":"Value","Maximum Continuous Drain Current":"3.5 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"15(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"690@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"20(Max) ns"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"68 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-39, 3 PIN","Pulsed Drain Current-Max (IDM)":"14 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Avalanche Energy Rating (Eas)":"68 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"3.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL P...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"7 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"68 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-39, 3 PIN","Pulsed Drain Current-Max (IDM)":"14 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Avalanche Energy Rating (Eas)":"68 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"3.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL P...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"7 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"600 mOhm @ 2.25A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-205AF Metal Can","Supplier Device Package":"TO-39","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6782,84,86","Power - Max":"800W","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Continuous Drain (Id) @ 25...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"25(Max) ns","Description":"Value","Maximum Continuous Drain Current":"3.5 A","Package":"3TO-39","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"15(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1080@10V mOhm","Manufacturer":"Microsemi","Typical Fall Time":"20(Max) ns"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3.5 A","Mounting":"Through Hole","Drain-Source On-Volt":"100 V","Power Dissipation":"25 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"25(Max) ns","Description":"Value","Maximum Continuous Drain Current":"3.5 A","Package":"3TO-39","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"15(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1080@10V mOhm","Manufacturer":"Microsemi","Typical Fall Time":"20(Max) ns"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"600 mOhm @ 2.25A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6782U,84U,86U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Contin...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"610 mOhm @ 3.5A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/556","Package \/ Case":"TO-205AF Metal Can","Supplier Device Package":"TO-39","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6782,84,86","Power - Max":"15W","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - C...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"610 mOhm @ 3.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/556","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6782U,84U,86U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.6000 ohm","Number of Terminals":"3","DS Breakdo...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Featured Product":"High Reliability Power \/ Military MOSFETs","Package \/ Case":"TO-205AF Metal Can","Current - Continuous Drain (Id) @ 25\u00b0C":"3.5A (Tc)","Gate Charge (Qg) @ Vgs":"8.1nC @ 10V","Product Photos":"JANTX2N6782","Rds On (Max) @ Id, Vgs":"610 mOhm @ 3.5A, 10V","Datasheets":"2N6782,84,86","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vds...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Featured Product":"High Reliability Power \/ Military MOSFETs","Package \/ Case":"18-BQFN Exposed Pad","Current - Continuous Drain (Id) @ 25\u00b0C":"3.5A (Tc)","Gate Charge (Qg) @ Vgs":"8.1nC @ 10V","Product Photos":"JANTX2N6782U, JANTX2N6849U","Rds On (Max) @ Id, Vgs":"610 mOhm @ 3.5A, 10V","Datasheets":"2N6782U,84U,86U","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to ...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"610 mOhm @ 3.5A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/556","Package \/ Case":"TO-205AF Metal Can","Supplier Device Package":"TO-205AF (TO-39)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6782,84,86","Power - Max":"15W","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"610 mOhm @ 3.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/556","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6782U,84U,86U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.6000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Case Conn...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"S...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"S...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"7 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMIC...