{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Rise Time":"20(Max) ns","Typical Turn-Off Delay Time":"30(Max) ns","Description":"Value","Maximum Continuous Drain Current":"2.25 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"15(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"1725@10V mOhm","Manufacturer":"International Rectifier"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Rise Time":"20(Max) ns","Typical Turn-Off Delay Time":"30(Max) ns","Description":"Value","Maximum Continuous Drain Current":"2.25 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"15(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"1725@10V mOhm","Manufacturer":"International Rectifier"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"20 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.25 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.72 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"9 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"20 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.25 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.72 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"9 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.5 Ohm @ 1.5A, 0V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6782U,84U,86U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"200V","Current - Continuou...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.6 Ohm @ 2.25A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/556","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6782U,84U,86U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.6 Ohm @ 2.25A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/556","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6782U,84U,86U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.6 Ohm @ 2.25A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/556","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6782U,84U,86U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)...