{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Channel Type":"N-CHANNEL","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ...

{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"20","g(fs) Max, (S) Trans. conduct,":"4.5","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"5.0","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.5","@(VDS) (V) (Test Condition)":"20","Package":"TO-39","I(DSS) Min. (A)":"1.0m","Military":"Y","Mil Number":"JANTX2N6788","t(r) Max. (s) Rise time":"70n","V(BR)DSS (V)":"100","t(f) Max. (s) Fall time.":"70n","g(fs) Min. (S) Trans. conduct.":"1.5","I(D) Abs. Drain Cur...

{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"20","g(fs) Max, (S) Trans. conduct,":"4.5","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"5.0","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.5","@(VDS) (V) (Test Condition)":"20","Package":"TO-39","I(DSS) Min. (A)":"1.0m","Military":"Y","Mil Number":"JANTXV2N6788","t(r) Max. (s) Rise time":"70n","V(BR)DSS (V)":"100","t(f) Max. (s) Fall time.":"70n","g(fs) Min. (S) Trans. conduct.":"1.5","I(D) Abs. Drain Cu...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"6(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Power Dissipation":"20(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"20(W)","Continuous Drain Current":"6(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"24 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Avalanche Energy Rating (Eas)":"76 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"70(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6 A","Package":"3TO-39","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"40(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"345@10V mOhm","Manufacturer":"International Rectifier"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"70(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6 A","Package":"3TO-39","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"40(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"345@10V mOhm","Manufacturer":"International Rectifier"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"76 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...

{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"24 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","...

{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"24 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"70(Max) ns","Description":"Value","Maximum Continuous Drain Current":"4.5 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"40(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"350@10V mOhm","Manufacturer":"International Rectifier"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"70(Max) ns","Description":"Value","Maximum Continuous Drain Current":"4.5 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"40(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"350@10V mOhm","Manufacturer":"International Rectifier"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.2420 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"0.2420 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMIC...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.2420 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Channel Type":"N-CHANNEL","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm",...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"300 mOhm @ 3.5A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-205AF Metal Can","Supplier Device Package":"TO-39","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6788,2N6790","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Continuous Drain (Id) @ 2...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"70 ns","Description":"Value","Maximum Continuous Drain Current":"6 A","Package":"3TO-39","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"40 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"350@10V mOhm","Manufacturer":"Microsemi"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"300 mOhm @ 3.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6788U,2N6790U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Continu...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"70 ns","Description":"Value","Maximum Continuous Drain Current":"4.5 A","Package":"18CLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"40 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"350@10V mOhm","Manufacturer":"Microsemi"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"350 mOhm @ 6A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/555","Package \/ Case":"TO-205AF Metal Can","Supplier Device Package":"TO-39","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6788,2N6790","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - ...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"350 mOhm @ 6A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/555","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6788U,2N6790U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3000 ohm","Number of Terminals":"3","DS Breakdown...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"350 mOhm @ 6A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/555","Package \/ Case":"TO-205AF Metal Can","Supplier Device Package":"TO-39","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6788,2N6790","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - ...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"350 mOhm @ 6A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/555","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6788U,2N6790U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"350 mOhm @ 6A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/555","Package \/ Case":"TO-205AF Metal Can","Supplier Device Package":"TO-205AF (TO-39)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6788,2N6790","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V",...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"350 mOhm @ 6A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/555","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6788U,2N6790U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Case Connec...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"1...

{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"1...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"1...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Channel Type":"N-CHANNEL","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Case Connec...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","...