{"C(iss) Max. (F)":"500p","Absolute Max. Power Diss. (W)":"25","V(BR)DSS (V)":"100","g(fs) Max, (S) Trans. conduct,":"3.5","I(D) Abs. Max.(A) Drain Curr.":"4.1","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"0.3","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"6.5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)t...

{"C(iss) Max. (F)":"500p","Absolute Max. Power Diss. (W)":"25","V(BR)DSS (V)":"100","g(fs) Max, (S) Trans. conduct,":"3.5","I(D) Abs. Max.(A) Drain Curr.":"4.1","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"0.3","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"6.5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)t...

{"C(iss) Max. (F)":"500p","Absolute Max. Power Diss. (W)":"25","V(BR)DSS (V)":"100","g(fs) Max, (S) Trans. conduct,":"3.5","I(D) Abs. Max.(A) Drain Curr.":"4.1","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"0.3","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"6.5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)t...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"6.5(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Power Dissipation":"25(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"25(W)","Continuous Drain Current":"6.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"6.5(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Power Dissipation":"25(W)","Operating Temp Range":"-55C to 150C","Package Type":"LLCC","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"18","Number of Elements":"1"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"6.5(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"25(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"25 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Avalanche Energy Rating (Eas)":"92 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.5 A","Package":"3TO-39","Typical Turn-On Delay Time":"60(Max) ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"345@10V mOhm","Manufacturer":"International Rectifier"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.5 A","Package":"3TO-39","Typical Turn-On Delay Time":"60(Max) ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"345@10V mOhm","Manufacturer":"International Rectifier"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"?20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"10 A","Mounting":"Through Hole","Drain-Source On-Volt":"400 V","Pin Count":"3 +Tab","Power Dissipation":"125 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-254AA","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.7 ohm","Number of Elements":"1"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"92 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"DISCONTINUED","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"DISCONTINUED","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.5 A","Package":"3TO-39","Typical Turn-On Delay Time":"60(Max) ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"345@10V mOhm","Manufacturer":"International Rectifier"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.5 A","Package":"18LLCC","Typical Turn-On Delay Time":"60(Max) ns","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"345@10V mOhm","Manufacturer":"International Rectifier"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.5 A","Package":"18LLCC","Typical Turn-On Delay Time":"60(Max) ns","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"345@10V mOhm","Manufacturer":"International Rectifier"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"25(W)","Continuous Drain Current":"6.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"92 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"165 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEM...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"92 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"165 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"92 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"165 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"320 mOhm @ 6.5A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-205AF Metal Can","Supplier Device Package":"TO-39","Packaging":"Bulk","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"2N6849","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Continuous Drain (Id) @ 25\u00b0...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.5 A","Package":"3TO-39","Typical Turn-On Delay Time":"60(Max) ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"320@10V mOhm","Manufacturer":"Microsemi"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"6.5 A","Mounting":"Through Hole","Drain-Source On-Volt":"100 V","Power Dissipation":"0.8 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Polarity":"P","Channel Mode":"Enhancement","Gate-Source Voltage (Max)":"\ufffd20 V","Drain Efficiency":"Not Required %","Operating Temperature Classification":"Military","Continuous Drain Current":"6.5 A","Mounting":"Through Hole","Noise Figure":"Not Required dB","Drain-Source On-Volt":"100 V","Frequency (Max)":"Not Required MHz","Drain Current (Max)":"6.5 A","Power Dissipation":"25 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Pin Count":"3","Power Gain ":"Not Requi...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"300 mOhm @ 4.1A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"2N6849U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Continuous Drai...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"320 mOhm @ 6.5A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/564","Package \/ Case":"TO-205AF Metal Can","Supplier Device Package":"TO-39","Packaging":"Bulk","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"2N6849","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Conti...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"320 mOhm @ 6.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/564","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"2N6849U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3000 ohm","Number of Terminals":"3","DS Breakdo...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"165 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEM...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Featured Product":"High Reliability Power \/ Military MOSFETs","Package \/ Case":"TO-205AF Metal Can","Current - Continuous Drain (Id) @ 25\u00b0C":"6.5A (Tc)","Gate Charge (Qg) @ Vgs":"34.8nC @ 10V","Product Photos":"JANTX2N6782","Rds On (Max) @ Id, Vgs":"320 mOhm @ 6.5A, 10V","Datasheets":"2N6849","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Featured Product":"High Reliability Power \/ Military MOSFETs","Package \/ Case":"18-BQFN Exposed Pad","Current - Continuous Drain (Id) @ 25\u00b0C":"6.5A (Tc)","Gate Charge (Qg) @ Vgs":"34.8nC @ 10V","Product Photos":"JANTX2N6782U, JANTX2N6849U","Rds On (Max) @ Id, Vgs":"320 mOhm @ 6.5A, 10V","Datasheets":"2N6849U","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"1","Drain to Source ...