{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"6.5(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Power Dissipation":"25(W)","Operating Temp Range":"-55C to 150C","Package Type":"LLCC","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"18","Number of Elements":"1"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.5 A","Package":"3TO-39","Typical Turn-On Delay Time":"60(Max) ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"345@10V mOhm","Manufacturer":"International Rectifier"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.5 A","Package":"18LLCC","Typical Turn-On Delay Time":"60(Max) ns","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"345@10V mOhm","Manufacturer":"International Rectifier"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.5 A","Package":"18LLCC","Typical Turn-On Delay Time":"60(Max) ns","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"345@10V mOhm","Manufacturer":"International Rectifier"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"165 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEM...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"165 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"165 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"300 mOhm @ 4.1A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"2N6849U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Continuous Drai...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"320 mOhm @ 6.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/564","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"2N6849U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V"...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"165 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEM...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Featured Product":"High Reliability Power \/ Military MOSFETs","Package \/ Case":"18-BQFN Exposed Pad","Current - Continuous Drain (Id) @ 25\u00b0C":"6.5A (Tc)","Gate Charge (Qg) @ Vgs":"34.8nC @ 10V","Product Photos":"JANTX2N6782U, JANTX2N6849U","Rds On (Max) @ Id, Vgs":"320 mOhm @ 6.5A, 10V","Datasheets":"2N6849U","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"1","Drain to Source ...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"320 mOhm @ 6.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/564","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"2N6849U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V"...