Comchip.com.tw/2N7002-G
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Series":"-","Standard Package":"3,000","Supplier Device Package":"SOT-23","Datasheets":"2N7002-G Datasheet","Rds On (Max) @ Id, Vgs":"3 Ohm @ 250mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"350mW","RoHS Information":"RoHS Declaration SOT-23 Series Material Declaration","Package \/ Case":"TO-2...
1631 Bytes - 13:20:36, 02 May 2024
Comchip.com.tw/2N7002-G
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Series":"-","Standard Package":"3,000","Supplier Device Package":"SOT-23","Datasheets":"2N7002-G Datasheet","Rds On (Max) @ Id, Vgs":"3 Ohm @ 250mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"350mW","RoHS Information":"RoHS Declaration SOT-23 Series Material Declaration","Package \/ Case":"TO-2...
1631 Bytes - 13:20:36, 02 May 2024
Microchip.com/2N7002-G
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"50pF @ 25V","Series":"-","Standard Package":"3,000","PCN Design\/Specification":"Die Attach Material Update 22\/Jun\/2015","Datasheets":"2N7002","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"360mW","Package \/ Case":"T...
1730 Bytes - 13:20:36, 02 May 2024
Microchip_technology_inc_/2N7002-G
862 Bytes - 13:20:36, 02 May 2024
Onsemi.com/2N7002-G
831 Bytes - 13:20:36, 02 May 2024
Supertex.com/2N7002-G
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...
1515 Bytes - 13:20:36, 02 May 2024