{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Applicat...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Other Drawings":"SOT-363 Package Top SOT-363 Package Side 1 SOT-363 Package Side 2","Package \/ Case":"6-TSSOP, SC-88, SOT-363","Gate Charge (Qg) @ Vgs":"-","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","Product Photos":"6-TSSOP, SC-88, SOT-363","PCN Design\/Specification":"Green Encapsulate Change 09\/July\/2007 Bond Wire 16\/Sept\/2008","PCN Other":"Multiple Device Changes 29\/Apr\/2013","Datashe...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package \/ Case":"6-TSSOP, SC-88, SOT-363","Current - Continuous Drain (Id) @ 25\u00b0C":"180mA","Gate Charge (Qg) @ Vgs":"0.87nC @ 10V","Product Photos":"6-TSSOP, SC-88, SOT-363","Rds On (Max) @ Id, Vgs":"6 Ohm @ 115mA, 10V","Datasheets":"2N7002DWA","FET Type":"2 N-Channel (Dual)","Standard Package":"3,000","Drain to Source Voltage (Vdss)":"60V","PCN Obsolescence\/ EOL":"Multiple Devices...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.23(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"0.4(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-363","Type":"Small Signal","Pin Count":"6","Number of Elements":"2"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"6-TSSOP, SC-88, SOT-363","Family":"FETs - Arrays","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"50pF @ 25V","Series":"-","Standard Package":"1","Supplier Device Package":"SOT-363","Datasheets":"2N7002DW","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","FET Type":"2 N-Channel (Dual)","Packaging":"Cut Tape (CT)","Power - Max":"310mW","Package \/ Case":"6-...

{"Polarity":"N","Continuous Drain Current":"0.23(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Small Signal","Gate-Source Voltage (Max)":"'\u00b120(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOT-363","Drain-Source On-Res":"7.5(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"6","Channel Mode":"Enhancement",...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package \/ Case":"6-TSSOP, SC-88, SOT-363","Current - Continuous Drain (Id) @ 25\u00b0C":"115mA","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-363 PKG","PCN Design\/Specification":"Mold Compound 12\/Dec\/2007 IDSS Parameter Update 11\/Mar\/2015","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","Datasheets":"2N7002DW Datasheet","FET Type":"2 N-Channel (Dual)","PCN Packaging":"Binary Year C...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"448; PPG-SOT363-PO; ; 6","Family":"FETs - Arrays","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"20pF @ 25V","Series":"OptiMOS\u2122","Standard Package":"1","Supplier Device Package":"PG-SOT363-6","Datasheets":"2N7002DW Datasheet","Rds On (Max) @ Id, Vgs":"3 Ohm @ 500mA, 10V","FET Type":"2 N-Channel (Dual)","Packaging":"Digi-Reel\u00a...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.5000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Applicat...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Qg - Gate Charge":"0.4 nC","Package \/ Case":"SOT-363-6","Part # Aliases":"2N7002DWH6327XTSA1 SP000917596","Fall Time":"3.1 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Configuration":"Dual","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Infineon","Id - Continuous Drain Current":"300 mA","Rds On - Drain...

{"Product Category":"MOSFET","Series":"2N7002","Brand":"Infineon Technologies","Packaging":"Reel","RoHS":"Details","Manufacturer":"Infineon"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Rise Time":"3.3 ns","Typical Turn-Off Delay Time":"5.5 ns","Description":"Value","Maximum Continuous Drain Current":"0.3 A","Package":"6SOT-363","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"3 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"3000@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"3.1 ns"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package \/ Case":"6-TSSOP, SC-88, SOT-363","Current - Continuous Drain (Id) @ 25\u00b0C":"115mA","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-363 PKG","Product Training Modules":"Diode Handling and Mounting","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","Datasheets":"2N7002DW Datasheet","FET Type":"2 N-Channel (Dual)","Standard Package":"3,000","Drain to Source Voltage (Vdss)":"60V","Online C...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.2(W)","Continuous Drain Current":"0.115(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SC-88","Type":"Small Signal","Pin Count":"6","Number of Elements":"2"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.2(W)","Continuous Drain Current":"0.115(A)","Drain-Source On-Volt":"60(V)","Operating Temperature Classification":"Military","Rad Hardened":"No","Operating Temp Range":"-55C to 150C","Type":"Small Signal","Number of Elements":"2"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Description":"Value","Maximum Continuous Drain Current":"0.115 A","Package":"6SOT-363","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"5000@10V mOhm","Manufacturer":"Panjit"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Description":"Value","Maximum Continuous Drain Current":"0.115 A","Package":"6SOT-363","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"5000@10V mOhm","Manufacturer":"Panjit"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Applic...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Applic...