{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"250mA (Ta)","Gate Charge (Qg) @ Vgs":"0.22nC @ 4.5V","Product Photos":"SOT23","PCN Design\/Specification":"Green Encapsulate 15\/May\/2008 Bond Wire 3\/May\/2011","Rds On (Max) @ Id, Vgs":"3 Ohm @ 250mA, 10V","Datasheets":"2N7002E Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Pack...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.3(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Pin Count":"3","Packaging":"Tape and Reel","Power Dissipation":"0.54(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"3(ohm)","Number of Elements":"1"}...