{"Category":"NPN Transistor, Transistor","Amps":"0.1A","MHz":"150 MHz","Volts":"200V"}...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-126, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN","Package Shape":"RE...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-126, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN","Package Shape":"RE...

{"V(CE)sat Max.(V)":"600m","Absolute Max. Power Diss. (W)":"1.2","V(BR)CBO (V)":"200","@V(CB) (V) (Test Condition)":"30","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"100m","h(FE) Max. Current gain.":"80","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"150","Package":"TO-126","f(T) Min. (Hz) Transition Freq":"150M","@V(CE) (V) (Test Condition)":"30","@I(B) (A) (Test Condition)":"2.0m","V(BR)CEO (V)":"200","Military":"N","@I(C) (A) (Tes...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-126, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"60","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN","Package Shape":"RE...

{"V(CE)sat Max.(V)":"600m","Absolute Max. Power Diss. (W)":"1.2","V(BR)CBO (V)":"200","@V(CB) (V) (Test Condition)":"30","h(FE) Min. Static Current Gain":"60","I(C) Abs.(A) Collector Current":"100m","h(FE) Max. Current gain.":"120","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"150","Package":"TO-126","f(T) Min. (Hz) Transition Freq":"150M","@V(CE) (V) (Test Condition)":"30","@I(B) (A) (Test Condition)":"2.0m","V(BR)CEO (V)":"200","Military":"N","@I(C) (A) (Te...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-126, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN","Package Shape":"R...

{"V(CE)sat Max.(V)":"600m","Absolute Max. Power Diss. (W)":"1.2","V(BR)CBO (V)":"200","@V(CB) (V) (Test Condition)":"30","h(FE) Min. Static Current Gain":"100","I(C) Abs.(A) Collector Current":"100m","h(FE) Max. Current gain.":"200","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"150","Package":"TO-126","f(T) Min. (Hz) Transition Freq":"150M","@V(CE) (V) (Test Condition)":"30","@I(B) (A) (Test Condition)":"2.0m","V(BR)CEO (V)":"200","Military":"N","@I(C) (A) (T...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-126, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"160","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN","Package Shape":"R...

{"V(CE)sat Max.(V)":"600m","Absolute Max. Power Diss. (W)":"1.2","V(BR)CBO (V)":"200","@V(CB) (V) (Test Condition)":"30","h(FE) Min. Static Current Gain":"160","I(C) Abs.(A) Collector Current":"100m","h(FE) Max. Current gain.":"320","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"150","Package":"TO-126","f(T) Min. (Hz) Transition Freq":"150M","@V(CE) (V) (Test Condition)":"30","@I(B) (A) (Test Condition)":"2.0m","V(BR)CEO (V)":"200","Military":"N","@I(C) (A) (T...