Toshiba.co.jp/2SJ168
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"2 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":...
1501 Bytes - 01:06:59, 12 May 2024
Toshiba.co.jp/2SJ168(F)
{"Polarity":"P","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.2 A","Mounting":"Surface Mount","Drain-Source On-Volt":"60 V","Pin Count":"3","Power Dissipation":"0.2 W","Operating Temp Range":"-55C to 150C","Package Type":"SMini","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"2 ohm","Number of Elements":"1"}...
1436 Bytes - 01:06:59, 12 May 2024
Toshiba.co.jp/2SJ168(TE85L,F)
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"2 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Surface Mount":"...
1537 Bytes - 01:06:59, 12 May 2024
Toshiba.co.jp/2SJ168(TE85L.F)
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.2(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"0.2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SMini","Pin Count":"3","Type":"Small Signal","Drain-Source On-Res":"2(ohm)","Number of Elements":"1"}...
1503 Bytes - 01:06:59, 12 May 2024
Toshiba.co.jp/2SJ168TE85LF
{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"- 60 V","Transistor Polarity":"P-Channel","Technology":"Si","Brand":"Toshiba","Id - Continuous Drain Current":"- 200 mA","Vgs th - Gate-Source Threshold Voltage":"- 3.5 V","Pd - Power Dissipation":"200 mW","Mounting Style":"SMD\/SMT","Packaging":"Reel","Product Category":"RF MOSFET Transistors","Rds On - Drain-Source Resistance":"1.3 Ohms","Package \/ Case":"SOT-346","Type":"RF Small Signal MOSFET","RoHS":"Details","Manufacturer":"Toshi...
1587 Bytes - 01:06:59, 12 May 2024
Toshiba.semicon-storage.com/2SJ168TE85LF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"P-Channel Logic Level Gate FETs","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Input Capacitance (Ciss) @ Vds":"85pF @ 10V","Series":"-","Standard Package":"1","Supplier Device Package":"SC-59","Datasheets":"2SJ168 -","Rds On (Max) @ Id, Vgs":"2 Ohm @ 50mA, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"200mW","Package \/ Case":"TO-236-3, SC-...
1806 Bytes - 01:06:59, 12 May 2024