Toshiba.co.jp/2SJ305
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
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Toshiba.co.jp/2SJ305(F)
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.2(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"30(V)","Power Dissipation":"0.2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SMini","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...
1409 Bytes - 13:50:49, 10 May 2024
Toshiba.co.jp/2SJ305(TE85,F)
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.2(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"0.2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SMini","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...
1464 Bytes - 13:50:49, 10 May 2024
Toshiba.co.jp/2SJ305(TE85L,F)
{"Polarity":"P","Drain-Source On-Res":"4 ohm","Gate-Source Voltage (Max)":"?20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.2 A","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30 V","Packaging":"Tape and Reel","Power Dissipation":"0.2 W","Operating Temp Range":"-55C to 150C","Package Type":"SMini","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...
1486 Bytes - 13:50:49, 10 May 2024
Toshiba.co.jp/2SJ305(TE85L.F)
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.2(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"0.2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SMini","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...
1466 Bytes - 13:50:49, 10 May 2024
Toshiba.co.jp/2SJ305TE85LF
{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"- 30 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Mounting Style":"SMD\/SMT","Vgs - Gate-Source Breakdown Voltage":"20 V","Forward Transconductance - Min":"100 mS","Brand":"Toshiba","Id - Continuous Drain Current":"- 200 mA","Vgs th - Gate-Source Threshold Voltage":"- 1.5 V","Pd - Power Dissipation":"200 mW","Packaging":"Tube","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"2.4 Ohms","Pa...
1712 Bytes - 13:50:49, 10 May 2024
Toshiba.semicon-storage.com/2SJ305TE85LF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"P-Channel Logic Level Gate FETs","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Input Capacitance (Ciss) @ Vds":"92pF @ 3V","Series":"-","Standard Package":"3,000","Supplier Device Package":"SC-59","Datasheets":"2SJ305 -","Rds On (Max) @ Id, Vgs":"4 Ohm @ 50mA, 2.5V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"200mW","Package \/ Case":"TO-236-3...
1827 Bytes - 13:50:49, 10 May 2024