Toshiba.co.jp/2SJ343
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR","Drain-source On Resistance-Max":"50 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1518 Bytes - 21:42:11, 12 May 2024
Toshiba.co.jp/2SJ343(TE85L,F)
1041 Bytes - 21:42:11, 12 May 2024