{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.5000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR","Drain-source On Resistance-Max":"0.7100 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b18(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"2(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"16(V)","Packaging":"Tape and Reel","Power Dissipation":"1.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"PW-Mini","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...