{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"155 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"212 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"212 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"212 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"465 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICO...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"319 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"73 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"292 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICO...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"319 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"73 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"292 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICO...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"319 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"73 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"292 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"319 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"73 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"292 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...

{"Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"2.4 W","Avalanche Energy Rating (Eas)":"319 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"292 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...

{"Category":"Power MOSFET","Maximum Drain Source Voltage":"100 V","Typical Gate Charge @ Vgs":"52 nC @ 10 V","Dimensions":"10 x 4.5 x 15 mm","Channel Mode":"Enhancement","Maximum Power Dissipation":"270 W","Typical Turn On Delay Time":"20 ns","Channel Type":"N","Length":"10 mm","Package Type":"TO-220AB","Number of Elements per Chip":"1","Maximum Continuous Drain Current":"\u00b173 A","Mounting Type":"Through Hole","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Pin Count":"3","Forwa...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"2-1L1C, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"3.40E-4 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Number of Terminals":"3","Surface Mou...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"2-1L1C, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"3.40E-4 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Number of Terminals":"3","Surface Mou...

{"C(iss) Max. (F)":"500p","Absolute Max. Power Diss. (W)":"40.0","g(fs) Max, (S) Trans. conduct,":"2.3","@V(GS) (V) (Test Condition)":"10.0","r(DS)on Max. (Ohms)":"1.0","@V(DS) (V) (Test Condition)":"10.0","I(DM) Max (A)(@25°C)":"8.0","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"1.0","V(BR)GSS (V)":"20.0","@I(D) (A) (Test Condition)":"3.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"3.5","V(GS)th Min. (V)":"1.5","Package":"TO-220AB","Military":"N","I(DSS) Max. (A)":"1.0m","@...