{"@Temp. (°C) (Test Condition)":"150","I(RM) Max.(A) Pk. Rev. Current":"100u","t(rr) Max.(s) Rev.Rec. Time":"50n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.0","Package":"DO-35","I(O) Max.(A) Output Current":"100m","I(RM) Max.(A) Reverse Current":"100n","@V(R) (V)(Test Condition)":"175","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"Y","@I(F) (A) (Test Condition)":"30m","@I(FM) (A) (Test Condition)":"100m","Mil Number":"JAN1N3070","@I(R) (A) (Test Condition)":"30m"}...

{"@Temp. (°C) (Test Condition)":"150","I(RM) Max.(A) Pk. Rev. Current":"100u","t(rr) Max.(s) Rev.Rec. Time":"50n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.0","Package":"DO-35","I(O) Max.(A) Output Current":"100m","I(RM) Max.(A) Reverse Current":"100n","@V(R) (V)(Test Condition)":"175","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"Y","@I(F) (A) (Test Condition)":"30m","@I(FM) (A) (Test Condition)":"100m","Mil Number":"JANTX1N3070","@I(R) (A) (Test Condition)":"30m"}...