{"V(RWM) (V) Work.Pk.Rev.Voltage":"10","Semiconductor Material":"Silicon","Package":"DO-13","t(resp) Max.(s) Response Time":"1.0p","V(C) Nom. (V) Clamping Voltage":"16.7","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"12","I(RM) Max.(A) Reverse Current":"5.0u","Military":"Y","Mil Number":"JAN1N5635A","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"90"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"10","Semiconductor Material":"Silicon","Package":"DO-13","t(resp) Max.(s) Response Time":"1.0p","V(C) Nom. (V) Clamping Voltage":"16.7","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"12","I(RM) Max.(A) Reverse Current":"5.0u","Military":"Y","Mil Number":"JANTX1N5635A","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"90"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"10","Semiconductor Material":"Silicon","Package":"DO-13","t(resp) Max.(s) Response Time":"1.0p","V(C) Nom. (V) Clamping Voltage":"16.7","P(D) Max.(W) Power Dissipation":"1.0","V(BR) Nom.(V)Rev.Break.Voltage":"12","I(RM) Max.(A) Reverse Current":"5.0u","Military":"Y","Mil Number":"JANTXV1N5635A","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"90"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"122","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"218","Package":"Axial-5","V(BR) Max.(V)Breakdown Voltage":"168","P(D) Max.(W) Power Dissipation":"3","V(BR) Nom.(V)Rev.Break.Voltage":"160","V(BR) Min.(V)Breakdown Voltage":"152","Military":"Y","Mil Number":"JAN1N6135A","@I(R) (A) (Test Condition)":"8m","@I(PP) (A) (Test Condition)":"2.3","P(PP) Max.(W) Peak Pulse Power":"500"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"122","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"218","Package":"Axial-5","V(BR) Max.(V)Breakdown Voltage":"168","P(D) Max.(W) Power Dissipation":"3","V(BR) Nom.(V)Rev.Break.Voltage":"160","V(BR) Min.(V)Breakdown Voltage":"152","Military":"Y","Mil Number":"JANTX1N6135A","@I(R) (A) (Test Condition)":"8m","@I(PP) (A) (Test Condition)":"2.3","P(PP) Max.(W) Peak Pulse Power":"500"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"122","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"218","Package":"Axial-5","V(BR) Max.(V)Breakdown Voltage":"168","P(D) Max.(W) Power Dissipation":"3","V(BR) Nom.(V)Rev.Break.Voltage":"160","V(BR) Min.(V)Breakdown Voltage":"152","Military":"Y","Mil Number":"JANTXV1N6135A","@I(R) (A) (Test Condition)":"8m","@I(PP) (A) (Test Condition)":"2.3","P(PP) Max.(W) Peak Pulse Power":"500"}...

{"V(CE)sat Max.(V)":"1.0","Absolute Max. Power Diss. (W)":"500m","V(BR)CBO (V)":"45","@V(CB) (V) (Test Condition)":"5.0","h(FE) Min. Static Current Gain":"45","I(C) Abs.(A) Collector Current":"25m","@Freq. (Hz) (Test Condition)":"1.0m","I(CBO) Max. (A)":"500n","@V(CBO) (V) (Test Condition)":"30","Package":"TO-5","f(T) Min. (Hz) Transition Freq":"2.5M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"1.0","V(BR)CEO (V)":"45","Military":"Y","Mil Number":"JAN2N335A","@I(C) (A) (Test Condition)...

{"Polarity":"Uni-Directional","Clamping Voltage":"16.7 V","Test Current (It)":"1 mA","Reverse Breakdown Voltage":"11.4 V","Mounting":"Through Hole","Rad Hardened":"No","Leakage Current (Max)":"0.005 uA","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Package Type":"DO-13","Peak Pulse Power Dissipation":"1500 W","Peak Pulse Current":"90 A","Reverse Stand-off Voltage ":"10.2 V","Pin Count":"2","Number of Elements":"1"}...