{"Status":"DISCONTINUED","Package Body Material":"UNSPECIFIED","Mfr Package Description":"DIE-1","Frequency Band":"VERY HIGH FREQUENCY TO KA BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"HYPERABRUPT","Package Style":"UNCASED CHIP","Breakdown Voltage-Min":"22 V","Diode Element Material":"GALLIUM ARSENIDE","Diode Capacitance-Nom (Cd)":"3.52 pF","Number of Elements":"1","Diode Cap Tolerance":"10 %","Quality Factor-Min":"2000","Terminal Position...

{"Turns Ratio:":"2.31:1","Secondary Voltages:":"1 x 120V","Input Current:":"2 A","Power Rating:":"75 VA","Frequency Max:":"60 Hz","Frequency Min:":"-","SVHC:":"To Be Advised","Transformer Mounting:":"Panel"}...

{"Semiconductor Material":"GaAs","Package":"Chip","Q Factor Min.":"2.0k","V(RRM)(V) Rep.Pk.Rev. Voltage":"22","Military":"N"}...

{"Semiconductor Material":"GaAs","Package":"Chip","Q Factor Min.":"2.0k","V(RRM)(V) Rep.Pk.Rev. Voltage":"22","Military":"N"}...