{"Status":"Active","Diode Type":"VARIABLE CAPACITANCE DIODE"}...

{"Status":"Active","Diode Type":"VARIABLE CAPACITANCE DIODE"}...

{"Package":"QCC-J","Output Config":"3-State","Nom. Supp (V)":"3.3","Number of Chip Selects":"1","Pins":"32","Military":"N","Bits Per Word":"8","Technology":"CMOS","Number of Words":"8k","t(a) Max. (s) Access Time":"250n"}...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Terminal Pitch":"2.54 mm","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","Input Voltage-Min":"4 V","Regulator Type":"FIXED POSITIVE LDO REGULATOR","Output Current-Max":"5 A","Dropout Voltage-Max":"1.4 V","Output Voltage-Max":"2.55 V","Number of Functions":"1","Terminal Position":"DUAL","Mfr Package Description":"PLASTIC, DIP-8","Package Shape":"RECTANGULAR","Output Voltage-Nom (FM)":"2.5 V","Output Voltage-Mi...

{"Category":"Isolators","Vce Saturation (Max)":"500mV","Operating Temperature":"-55\u00b0C ~ 110\u00b0C","Input Type":"DC","Package \/ Case":"6-DIP (0.300\", 7.62mm)","Current Transfer Ratio (Min)":"20% @ 10mA","Current Transfer Ratio (Max)":"-","Rise \/ Fall Time (Typ)":"-","Output Type":"Transistor with Base","Current - DC Forward (If) (Max)":"60mA","Datasheets":"4N2x,3x,H11Ax Series","Number of Channels":"1","Standard Package":"65","Voltage - Output (Max)":"80V","Current - Output \/ Channel":"-","Voltage...

{"Category":"Isolators","Vce Saturation (Max)":"500mV","Operating Temperature":"-55\u00b0C ~ 100\u00b0C","Input Type":"DC","Package \/ Case":"6-DIP (0.300\", 7.62mm)","Current Transfer Ratio (Min)":"20% @ 10mA","Current Transfer Ratio (Max)":"-","Rise \/ Fall Time (Typ)":"-","Output Type":"Transistor with Base","Current - DC Forward (If) (Max)":"100mA","Datasheets":"4N25-28, 4N35-37, H11A1-A5","Number of Channels":"1","Standard Package":"1,000","Voltage - Output (Max)":"30V","Current - Output \/ Channel":"-...

{"Output Device":"Transistor With Base","Isolation Voltage":"5300(V)","Collector-Emitter Voltage":"30(V)","Reverse Breakdown Voltage":"6(V)","Mounting":"Through Hole","Forward Current":"100(mA)","Forward Voltage":"1.5(V)","Output Type":"DC","Packaging":"Bulk","Operating Temperature Classification":"Industrial","Operating Temp Range":"-55C to 100C","Package Type":"PDIP Black","Rad Hardened":"No","Input Type":"DC","Collector-Emitter Saturation Voltage":"0.5(V)","Power Dissipation":"0.25(W)","Pin Count":"6","N...

{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"LEAD FREE, TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"176 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"2055 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"44 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transi...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2055 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"44 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0690 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"176 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-3P-3,TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Series":"-","Standard Package":"450","Supplier Device Package":"TO-3P","Datasheets":"FQA34N25","Rds On (Max) @ Id, Vgs":"85 mOhm @ 17A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"245W","Package \/ Case":"TO-3P-3, SC-65-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"250V","Current...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Series":"-","Package \/ Case":"SC-94","Supplier Device Package":"TO-3PF","Datasheets":"FQAF34N25","Rds On (Max) @ Id, Vgs":"85 mOhm @ 10.9A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"100W","Standard Package":"360","Drain to Source Voltage (Vdss)":"250V","Current - Continuous Drain (Id) @ 25\u00b0C":"21.7...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Series":"QFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-220","Datasheets":"FQP4N25 TO220B03 Pkg Drawing","Rds On (Max) @ Id, Vgs":"1.75 Ohm @ 1.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"52W","Package \/ Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Series":"QFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-220F","Datasheets":"FQPF4N25","Rds On (Max) @ Id, Vgs":"1.75 Ohm @ 1.4A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"32W","Package \/ Case":"TO-220-3 Full Pack","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"250V","Cu...

{"Status":"ACTIVE","Coll-emtr Bkdn Voltage-Min":"30 V","Mfr Package Description":"DIP-6","Operating Temperature-Min":"-55 Cel","Input Cont Forward Current-Max":"80 mA","Current Transfer Ratio-Nom":"50 %","Operating Temperature-Max":"100 Cel","Optoelectronic Device Type":"TRANSISTOR OUTPUT","Isolation Voltage-Max":"2500 V","Number of Functions":"1","Collector Dark Current-Max":"50 nA","Configuration":"SINGLE"}...

{"Collector-Emitter Saturation Voltage":"0.5(V)","Isolation Voltage":"5300(V)","Forward Current":"60(mA)","Reverse Breakdown Voltage":"6(V)","Mounting":"Through Hole","Collector-Emitter Voltage":"30(V)","Operating Temp Range":"-55C to 100C","Output Type":"DC","Standard":"UL","Operating Temperature Classification":"Industrial","Power Dissipation":"0.2(W)","Forward Voltage":"1.5(V)","Package Type":"PDIP","Rad Hardened":"No","Input Type":"DC","Output Device":"Transistor With Base","Maximum Forward Current":"60...

{"Status":"ACTIVE","Operating Wavelength-Nom":"1310 nm","Terminal Finish":"NOT SPECIFIED","Operating Temperature-Max":"70 Cel","Communication Standard":"GR-1073","Body Length or Diameter":"100 mm","Fiber Optic Device Type":"SWITCH","Operating Wavelength-Min":"1290 nm","Operating Wavelength-Max":"1330 nm","Operating Temperature-Min":"0.0 Cel","Switching Action":"NON-LATCHING","Body Height":"15 mm","Port Configuration":"1X4","Switching Speed":"6 ms","Body Breadth":"60 mm","Connection Type":"LC\/PC CONNECTOR"}...

{"Category":"Isolators","Vce Saturation (Max)":"500mV","Catalog Drawings":"Optoisolator Circuit","Operating Temperature":"-55\u00b0C ~ 100\u00b0C","Input Type":"DC","Package \/ Case":"6-DIP (0.300\", 7.62mm)","Current Transfer Ratio (Min)":"20% @ 10mA","Product Photos":"6-DIP Pkg","Current Transfer Ratio (Max)":"-","Rise \/ Fall Time (Typ)":"3\u00b5s, 3\u00b5s","Output Type":"Transistor with Base","Current - DC Forward (If) (Max)":"80mA","Datasheets":"4N25, 4N26 Series","Number of Channels":"1","Standard Pa...

{"V(CE)sat Max.(V)":"500m","P(D) Max.(W) Power Dissipation":"150m","CTR Min.(%)Current Trans.Ratio":"50","V(F) Max.(V) Forward Voltage":"1.5","I(C) Abs.(A) Collector Current":"100m","t(resp) Max.(s) Response Time":"3.0u","Number of Channels":"1","Package":"DIP","@V(CE) (V) (Test Condition)":"10","V(BR)CEO (V) Breakdown Voltage":"30","@I(F) (A) (Test Condition)":"10m","Military":"N","@I(C) (A) (Test Condition)":"2.0m","Viso Max.(V) Isolation Voltage":"2.5k","I(F) Max. (A) Forward Current":"80m"}...

{"tW Min (S)":"25n","t(acc) Max. (S)":"25n","Package":"DIP","Number of Words":"16k","P(D) Max.(W) Power Dissipation":"1.0","Nom. Supp (V)":"5.0","Pins":"24","Military":"N","Bits Per Word":"4","Technology":"CMOS","Output Config":"3-State"}...

{"P(O)rad Min.(W)Rad. Out. Power":"25m","V(R) Max.(V) Reverse Voltage":"2.0","I(F) Max. (A) Forward Current":"400m","Package":"ModuleC","Peak Wavelength (m)":"1.55u","@I(F) (A) (Test Condition)":"400m","V(F) Max.(V) Forward Voltage":"2.5"}...

{"V(R) Max.(V) Reverse Voltage":"2.0","I(F) Max. (A) Forward Current":"400m","Package":"ModuleC","Peak Wavelength (m)":"1.55u","@I(F) (A) (Test Condition)":"400m","V(F) Max.(V) Forward Voltage":"2.5"}...

{"Output Device":"Transistor With Base","Isolation Voltage":"5300(V)","Forward Current":"100(mA)","Reverse Breakdown Voltage":"6(V)","Mounting":"Through Hole","Rad Hardened":"No","Output Type":"DC","Standard":"UL","Packaging":"Bulk","Operating Temperature Classification":"Industrial","Forward Voltage":"1.5(V)","Package Type":"PDIP Black","Input Type":"DC","Operating Temp Range":"-55C to 100C","Current Transfer Ratio":"20(%)","Power Dissipation":"0.25(W)","Pin Count":"6","Number of Elements":"1"}...

{"Package":"SO","Output Config":"3-State","Program Voltage (V)":"12.5","Nom. Supp (V)":"5.0","Number of Chip Selects":"1","Pins":"28","Military":"N","Bits Per Word":"8","Technology":"CMOS","Number of Words":"8k","t(a) Max. (s) Access Time":"250n"}...

{"Status":"Discontinued","Package":"DIP","Output Config":"3-State","P(D) Max.(W) Power Dissipation":"1.0","Nom. Supp (V)":"5.0","Number of Chip Selects":"1","Pins":"24","Military":"N","Bits Per Word":"8","Technology":"NMOS","Number of Words":"8k","t(a) Max. (s) Access Time":"250n"}...

{"Status":"Discontinued","t(acc) Max. (S)":"250n","Package":"DIP","Output Config":"3-State","P(D) Max.(W) Power Dissipation":"1.0","Nom. Supp (V)":"5.0","Pins":"16","Military":"N","Bits Per Word":"1","Technology":"MOS","Number of Words":"64k"}...

{"Package":"DIP","Number of Words":"4k","f(oper) Max. (Hz)":"28M","Nom. Supp (V)":"5.0","Pins":"28","Military":"N","Bits Per Word":"9","Technology":"CMOS","t(a) Max. (s) Access Time":"25n"}...

{"Package":"DIP","Number of Words":"4k","f(oper) Max. (Hz)":"28M","Nom. Supp (V)":"5.0","Pins":"28","Military":"N","Bits Per Word":"9","Technology":"CMOS","t(a) Max. (s) Access Time":"25n"}...

{"tW Min (S)":"25n","t(acc) Max. (S)":"25n","Package":"DIP","Output Config":"Open-Drain","t(acc) Addr Match (S)":"25n","P(D) Max.(W) Power Dissipation":"1.0","Nom. Supp (V)":"5.0","Pins":"28","Military":"N","Bits Per Word":"8","Technology":"CMOS","Number of Words":"8k"}...

{"Semiconductor Material":"Silicon","Package":"Pill-C","f(co) Min. (Hz) Cut-off freq.":"150G","V(RRM)(V) Rep.Pk.Rev. Voltage":"80","Ct{Cj} Nom. (F) Junction Cap.":"2.0p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"6.0"}...

{"Semiconductor Material":"Silicon","Package":"Pill-C","f(co) Min. (Hz) Cut-off freq.":"150G","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Ct{Cj} Nom. (F) Junction Cap.":"2.0p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"6.0"}...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Mfr Package Description":"DIP-6","Operating Temperature-Min":"-55 Cel","Coll-emtr Bkdn Voltage-Min":"30 V","Current Transfer Ratio-Nom":"50 %","Operating Temperature-Max":"100 Cel","Isolation Voltage-Max":"2500 V","Number of Functions":"1","Optoelectronic Device Type":"TRANSISTOR OUTPUT","China RoHS Compliant":"Yes","EU RoHS Compliant":"Yes","Collector Dark Current-Max":"50 nA","Input Cont Forward Current-Max":"60 mA","Configuration":"S...

{"Type":"Analog","Current Transfer Ratio":"50","Package Type":"6-Pin DIP","Output Type":"Transistor","Input Type":"LED"}...