AP02N60J-H 1.4 A, 700 V, 8.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
From Advanced Power Electronics Corp. USA
| Status | ACTIVE |
| Avalanche Energy Rating (Eas) | 49 mJ |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 700 V |
| Drain Current-Max (ID) | 1.4 A |
| Drain-source On Resistance-Max | 8.8 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | ROHS COMPLIANT PACKAGE-3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Pulsed Drain Current-Max (IDM) | 5.6 A |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
