AP02N60T-H-HF 300 mA, 700 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
From Advanced Power Electronics Corp. USA
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 700 V |
| Drain Current-Max (ID) | 0.3000 A |
| Drain-source On Resistance-Max | 9 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Terminal Form | WIRE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE SMALL SIGNAL |
