AP4034AGYT-HF
30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET

From Advanced Power Electronics Corp. USA

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain-source On Resistance-Max0.0090 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package Description3 X 3 MM, 1 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8
Number of Elements1
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeSQUARE
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max3.57 W
Pulsed Drain Current-Max (IDM)60 A
Surface MountYes
Terminal FormNO LEAD
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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