{"Terminal Form":"FLAT","Power Dissipation Ambient-Max":"1.25 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"16 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"0.8000 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"400 V","Transistor Application":"SWITCHING","...