{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT PACKAGE-3","Pulsed Drain Current-Max (IDM)":"2 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Avalanche Energy Rating (Eas)":"0.5000 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.5000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Ty...