{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"67 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"650 V","...

{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"67 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"650 V","...