Product Datasheet Search Results:
- APM2509NUBC-PB
- Anpec Electronics Corp.
- 9.5 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
- APM2509NUBC-PBL
- Anpec Electronics Corp.
- 9.5 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
Product Details Search Results:
Anpec.com.tw/APM2509NUBC-PB
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"50 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0090 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1500 Bytes - 23:36:02, 15 January 2026
Anpec.com.tw/APM2509NUBC-PBL
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"50 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0090 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"N-CHANNEL","FET...
1562 Bytes - 23:36:02, 15 January 2026
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| APM25.pdf | 0.03 | 1 | Request |





