5SMY12K1280 100 A, 1200 V, N-CHANNEL IGBT
From Abb Switzerland Ltd. Semiconductors
Status | ACTIVE |
Channel Type | N-CHANNEL |
Collector Current-Max (IC) | 100 A |
Collector-emitter Voltage-Max | 1200 V |
Configuration | SINGLE |
Mfr Package Description | 11.90 X 11.20 MM, DIE-2 |
Number of Elements | 1 |
Number of Terminals | 2 |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | UNCASED CHIP |
Surface Mount | Yes |
Terminal Form | NO LEAD |
Terminal Position | UPPER |
Transistor Element Material | SILICON |
Transistor Type | INSULATED GATE BIPOLAR |
Turn-off Time-Nom (toff) | 565 ns |
Turn-on Time-Nom (ton) | 215 ns |