APT7575AN
N-Channel Enhancement MOSFET - RthJC 0.53 C/W(max),RthJA 30 C/W(max)

From Advanced Power Technology

@(VDS) (V) (Test Condition)30
Absolute Max. Power Diss. (W)230
C(iss) Max. (F)2.95n
I(D) Abs. Drain Current (A)11.5
I(DSS) Min. (A)250u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-3
V(BR)DSS (V)750
V(BR)GSS (V)30
r(DS)on Max. (Ohms)750m
t(f) Max. (s) Fall time.48n
t(r) Max. (s) Rise time36n

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