G603B
S BAND, 3.3 pF, 25 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-35

From API Electronics Group

StatusACTIVE
Breakdown Voltage-Min25 V
Case ConnectionISOLATED
ConfigurationSINGLE
Diode Cap Tolerance5 %
Diode Capacitance Ratio-Min1.7
Diode Capacitance-Nom (Cd)3.3 pF
Diode Element MaterialSILICON
Diode TypeVARIABLE CAPACITANCE DIODE
Frequency BandS BAND
Number of Elements1
Number of Terminals2
Package Body MaterialGLASS
Package ShapeROUND
Package StyleLONG FORM
Power Dissipation Limit-Max0.4000 W
Quality Factor-Min600
Terminal FinishNOT SPECIFIED
Terminal FormWIRE
Terminal PositionAXIAL
Variable Capacitance Diode ClassificationABRUPT

External links