VQ3001J
0.85 A, 30 V, 1 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET

From Atmel Corporation

StatusTransferred
ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)0.8500 A
Drain-source On Resistance-Max1 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 CodeR-PDIP-T14
Number of Elements4
Number of Terminals14
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleIN-LINE
Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
Pulsed Drain Current-Max (IDM)3 A
Qualification StatusCOMMERCIAL
Surface MountNO
Terminal FormTHROUGH-HOLE
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON

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