{"V(CE)sat Max.(V)":"2.8","Absolute Max. Power Diss. (W)":"1.0k","I(C) Abs.(A) Collector Current":"100","Package":"Module-s\/q","V(BR)CEO (V)":"1.2k","Military":"N"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"480 ns","Collector Current-Max (IC)":"205 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"110 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL","China RoHS Co...