{"V(BR)GES (V)":"20","Absolute Max. Power Diss. (W)":"1.0k","V(CE)sat Max.(V)":"3.3","V(BR)CES (V)":"1.0k","I(C) Abs.(A) Collector Current":"100","t(r) Max. (s) Rise time":"450n","Circuits Per Package":"1","t(f) Max. (s) Fall time.":"450n","I(GES) Max. (A)":"100n","Package":"Module-s\/q","t(d)off Max. (s) Off time":"350n","I(CES) Min. (A)":"2.0m"}...

{"V(CE)sat Max.(V)":"2.8","Absolute Max. Power Diss. (W)":"1.0k","I(C) Abs.(A) Collector Current":"100","Package":"Module-s\/q","V(BR)CEO (V)":"1.2k","Military":"N"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"480 ns","Collector Current-Max (IC)":"205 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"110 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL","China RoHS Co...