{"Gate-Emitter Leakage Current":"320 nA","Continuous Collector Current at 25 C":"145 A","Product Category":"IGBT Modules","Minimum Operating Temperature":"- 40 C","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"1 kW","Product":"IGBT Silicon Modules","Collector- Emitter Voltage VCEO Max":"1700 V","Packaging":"Bulk","Maximum Gate Emitter Voltage":"20 V","Mounting Style":"Screw","Package \/ Case":"Half Bridge2","Collector-Emitter Saturation Voltage":"3.4 V","Configuratio...