{"Category":"Discrete Semiconductor Products","Current Drain (Id) - Max":"-","Product Training Modules":"High Voltage Switches for Power Processing","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Product Photos":"SOT-23-3","PCN Assembly\/Origin":"Assembly Site Addition 20\/Jul\/2015","PCN Design\/Specification":"Mold Compound 12\/Dec\/2007","Voltage - Cutoff (VGS off) @ Id":"800mV @ 0.5nA","Datasheets":"BSR58","FET Type":"N-Channel","Standard Package":"1","Voltage - Breakdown (V(BR)GSS)":"40V","Drain to Sou...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2500 W","Package Style":"SMALL OUTLINE","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Number of Elements":"1","Feedback Cap-Max (Crss)":"5 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE"...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2500 W","Package Style":"SMALL OUTLINE","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Number of Elements":"1","Feedback Cap-Max (Crss)":"5 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE"...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2500 W","Package Style":"SMALL OUTLINE","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Number of Elements":"1","Feedback Cap-Max (Crss)":"5 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configurati...

{"C(iss) Max. (F)":"5.0p","Absolute Max. Power Diss. (W)":"225m","I(GSS) Max. (A)":"1.0n","I(DSS) Min. (A)":"80m","V(BR)DSS (V)":"40","V(BR)GSS (V)":"40","Package":"SOT-23","Military":"N","V(GS)off Max. (V)":"4.0","r(DS)on Max. (Ohms)":"60"}...

{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0050 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"60 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Bre...

{"Category":"Discrete Semiconductor Products","Current Drain (Id) - Max":"-","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Product Photos":"SOT-23-3","Voltage - Cutoff (VGS off) @ Id":"800mV @ 0.5nA","Datasheets":"BSR56(57,58)","FET Type":"N-Channel","Standard Package":"3,000","Voltage - Breakdown (V(BR)GSS)":"40V","Drain to Source Voltage (Vdss)":"40V","Resistance - RDS(On)":"60 Ohm","PCN Obsolescence\/ EOL":"Multiple Devices 05\/Jul\/2015","Online Catalog":"N-Channel JFETs","Mounting Type":"Surface Mount...

{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0050 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"60 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"40 V","Transistor Appl...

{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0050 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"60 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"40 V","Transistor Appl...

{"Drain-Gate Voltage (Max)":"40(V)","Gate-Source Voltage (Max)":"-40(V)","Mounting":"Surface Mount","Operating Temperature (Max)":"150C","Channel Type":"N","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"SOT-23","Configuration":"Single","Pin Count":"3","Operating Temperature (Min)":"-55C"}...

{"Category":"Discrete Semiconductor Products","PCN Obsolescence\/ EOL":"Multiple Devices 01\/Oct\/2008","Product Photos":"SOT-23-3","Family":"JFETs (Junction Field Effect)","Current - Drain (Idss) @ Vds (Vgs=0)":"8mA @ 15V","Series":"-","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Supplier Device Package":"SOT-23-3 (TO-236)","Voltage - Cutoff (VGS off) @ Id":"800mV @ 1\u00b5A","Packaging":"Tape & Reel (TR)","FET Type":"N-Channel","Datasheets":"BSR58LT1","Power - Max":"350mW","Standard Package":"3,000","Re...

{"C(iss) Max. (F)":"5.0p","Absolute Max. Power Diss. (W)":"225m","I(GSS) Max. (A)":"1.0n","I(DSS) Min. (A)":"80m","V(BR)DSS (V)":"40","V(BR)GSS (V)":"40","Package":"TO-236","Military":"N","V(GS)off Max. (V)":"4.0","r(DS)on Max. (Ohms)":"60"}...

{"Category":"JFET","Manufacturer":"Rochester Electronics","Maximum Drain Gate Voltage":"-40 V","Maximum Gate Source Voltage":"-35 V","Mounting":"Surface Mount","Package":"3SOT-23","Operating Temperature":"-65 to 150 \u00b0C","Configuration":"Single","Description":"Value"}...