{"Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"1100 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON CARBIDE","Drain Current-Max (ID)":"26.1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"1200 V"...