2N6299+JAN PNP Darlington Transistor
From Defense Supply Center Columbus
| @I(B) (A) (Test Condition) | 80m |
| @I(C) (A) (Test Condition) | 8.0 |
| @V(CBO) (V) (Test Condition) | 80 |
| @V(CE) (V) (Test Condition) | 3.0 |
| Absolute Max. Power Diss. (W) | 75 |
| I(C) Abs.(A) Collector Current | 8.0 |
| I(CBO) Max. (A) | 500u |
| Mil Number | JAN2N6299 |
| Military | Y |
| Package | TO-66 |
| Semiconductor Material | Silicon |
| V(BR)CBO (V) | 80 |
| V(BR)CEO (V) | 80 |
| V(CE)sat Max.(V) | 3.0 |
| f(T) Min. (Hz) Transition Freq | 4.0M |
| h(FE) Max. Current gain. | 18k |
| h(FE) Min. Static Current Gain | 750 |
