2N6800+JANTXV
N-Channel Enhancement MOSFET

From Defense Supply Center Columbus

@I(D) (A) (Test Condition)2.0
@V(DS) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)25
C(iss) Max. (F)900p
I(D) Abs. Drain Current (A)3.0
I(DSS) Min. (A)1m
I(GSS) Max. (A)100n
Mil NumberJANTXV2N6800
MilitaryY
PackageTO-39
V(BR)DSS (V)400
g(fs) Max, (S) Trans. conduct,6.0
g(fs) Min. (S) Trans. conduct.2.0
r(DS)on Max. (Ohms)1.0
t(f) Max. (s) Fall time.35n
t(r) Max. (s) Rise time35n

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