EPC2010C TRANS GAN 200V 22A BUMPED DIE
From EPC
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| Datasheets | EPC2010C Datasheet |
| Drain to Source Voltage (Vdss) | 200V |
| FET Feature | Logic Level Gate |
| FET Type | GaNFET N-Channel, Gallium Nitride |
| Family | FETs - Single |
| For Use With | 917-1091-ND - BOARD DEV FOR EPC2010C 200V EGAN |
| Gate Charge (Qg) @ Vgs | 3.7nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 380pF @ 100V |
| Mfg Application Notes | Second Generation eGaN® FETs Assembling eGaN® FETs Die Attach Procedure Die Removal Procedure Using eGaN® FETs |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | 917-1085-1 |
| Package / Case | Die |
| Packaging | Cut Tape (CT) |
| Power - Max | - |
| Product Photos | eGaN Series |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 12A, 5V |
| Series | eGaN® |
| Standard Package | 1 |
| Supplier Device Package | Die Outline (7-Solder Bar) |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
