EPC2012CENGR TRANS GAN 200V 5A BUMPED DIE
From EPC
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Datasheets | EPC2012C Preliminary~ |
| Drain to Source Voltage (Vdss) | 200V |
| FET Feature | Standard |
| FET Type | GaNFET N-Channel, Gallium Nitride |
| Family | FETs - Single |
| For Use With | 917-1092-ND - BOARD DEV FOR EPC2012C 200V EGAN |
| Gate Charge (Qg) @ Vgs | 1nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 100pF @ 100V |
| Mfg Application Notes | Assembling eGaN® FETs Die Attach Procedure Die Removal Procedure Using eGaN® FETs |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | 917-EPC2012CENGRTR |
| Package / Case | Die |
| Packaging | Tape & Reel (TR) |
| Power - Max | - |
| Product Photos | EPC2012C |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 3A, 5V |
| Series | eGaN® |
| Standard Package | 1,000 |
| Supplier Device Package | Die Outline (4-Solder Bar) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
